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[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Gate-aided drain to field breakdown of high voltage NMOS devices
Dumlao, A.P., Madurawe, R.U., McFarlane, T.Year:
1990
Language:
english
DOI:
10.1109/iedm.1990.237196
File:
PDF, 324 KB
english, 1990