Summary Abstract: Epitaxial growth, doping, and analytical...

Summary Abstract: Epitaxial growth, doping, and analytical characterization of monocrystalline beta-SiC semiconductor thin films

Kim, H. J.
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Volume:
6
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.575214
Date:
May, 1988
File:
PDF, 502 KB
english, 1988
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