![](/img/cover-not-exists.png)
[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - High density dual-active-device-layer (DUAL)-CMOS structure with vertical tungsten plug-in wirings
Oyama, K., Kunio, T., Koh, R., Hayashi, Y., Kajiyana, K., Tsunenari, K.Year:
1990
Language:
english
DOI:
10.1109/iedm.1990.237226
File:
PDF, 337 KB
english, 1990