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Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si[sub 0.83]Ge[sub 0.17] alloys
D’Angelo, D., Piro, A. M., Terrasi, A., Grimaldi, M. G., Mirabella, S., Bongiorno, C.Volume:
101
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2732680
File:
PDF, 558 KB
english, 2007