Tin Doping of Silicon for Controlling Oxygen Precipitation...

Journal of The Electrochemical Society 2001 Vol. 148; Iss. 12

Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness

Claeys, C., Simoen, E., Neimash, V. B., Kraitchinskii, A., Kras’ko, M., Puzenko, O., Blondeel, A., Clauws, P.
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Volume:
148
Year:
2001
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1417558
File:
PDF, 206 KB
english, 2001
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