Depth profile reconstructions of electronic transport...

Journal of Applied Physics 2014 / 07 Vol. 116; Iss. 3

Depth profile reconstructions of electronic transport properties in H+ MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

Tai, Rui, Wang, Chinhua, Hu, Jingpei, Mandelis, Andreas
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Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4887117
Date:
July, 2014
File:
PDF, 1.33 MB
english, 2014
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