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Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing
Wank, M. A., van Swaaij, R. A. C. M. M., Kudlacek, P., van de Sanden, M. C. M., Zeman, M.Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3505794
File:
PDF, 548 KB
english, 2010