Simulation of the orientation-dependent growth of...

Simulation of the orientation-dependent growth of InGaAs/InP by metalorganic vapor-phase epitaxy

Bakin, A., Zwinge, G., Klockenbrink, R., Wehmann, H.-H., Schlachetzki, A.
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Volume:
76
Year:
1994
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.357272
File:
PDF, 649 KB
english, 1994
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