Molecular beam epitaxy growth and characterization of...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2010 Vol. 28; Iss. 3

Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection

Plis, E., Khoshakhlagh, A., Myers, S., Kim, H. S., Gautam, N., Sharma, Y. D., Krishna, S., Lee, S. J., Noh, S. K.
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Volume:
28
Year:
2010
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3276429
File:
PDF, 631 KB
english, 2010
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