Two precursor model for low-pressure chemical vapor...

Two precursor model for low-pressure chemical vapor deposition of silicon dioxide from tetraethylorthosilicate

IslamRaja, M. M.
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Volume:
11
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.586778
Date:
May, 1993
File:
PDF, 1.05 MB
english, 1993
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