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Current transport in strained n-Si1−xGex/p-Si heterojunction diodes
Willander, Magnus, Shen, Guang-Di, Xu, Dan-Xia, Ni, Wei-XinVolume:
63
Year:
1988
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.340451
File:
PDF, 620 KB
english, 1988