The behavior of dislocations in GaAs substrates during the...

Journal of Applied Physics 1981 Vol. 52; Iss. 6

The behavior of dislocations in GaAs substrates during the growth of GaxAl1−xAs epitaxial layers

Booyens, H.
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Volume:
52
Year:
1981
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.329263
File:
PDF, 495 KB
english, 1981
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