Effect of In-Ga-Zn-O active layer channel composition on...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2012 Vol. 30; Iss. 4

Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

Bak, Jun Yong, Yoon, Sung Min, Yang, Shinhyuk, Kim, Gi Heon, Ko Park, Sang-Hee, Hwang, Chi-Sun
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Volume:
30
Year:
2012
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4731257
File:
PDF, 1.66 MB
english, 2012
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