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Comparative study of properties between a-GeC:H and a-SiC:H films prepared by radio-frequency reactive sputtering in methane
Saito, N., Yamaguchi, T., Nakaaki, I.Volume:
78
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.359915
File:
PDF, 974 KB
english, 1995