[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Oxygen-doped gesbte phase-change memory cells featuring 1.5 V/100-μA standard 0.13μm CMOS operations
Matsuzaki, N., Kurotsuchi, K., Matsui, Y., Tonomura, O., Yamamoto, N., Fujisaki, Y., Kitai, N., Takemura, R., Osada, K., Hanzawa, S., Moriya, H., Iwasaki, T., Kawahara, T., Takaura, N., Terao, M., MatYear:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609459
File:
PDF, 667 KB
english, 2005