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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Competitive and cost effective high-k based 28nm CMOS technology for low power applications

Arnaud, F., Thean, A., Eller, M., Lipinski, M., Teh, Y.W., Ostermayr, M., Kang, K., Kim, N.S., Ohuchi, K., Han, J-P., Nair, D.R., Lian, J., Uchimura, S., Kohler, S., Miyaki, S., Ferreira, P., Park, J-
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Year:
2009
Language:
english
DOI:
10.1109/iedm.2009.5424255
File:
PDF, 1.06 MB
english, 2009
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