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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Gate-last integration on planar FDSOI MOSFET: Impact of mechanical boosters and channel orientations
Morvan, S., Le Royer, C., Andrieu, F., Perreau, P., Morand, Y., Cooper, D., Casse, M., Garros, X., Hartmann, J.-M., Tosti, L., Brevard, L., Ponthenier, F., Rivoire, M., Euvrard, C., Seignard, A., BessYear:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724668
File:
PDF, 557 KB
english, 2013