Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2008 Vol. 26; Iss. 4
Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles
Osano, Yugo, Ono, KouichiVolume:
26
Year:
2008
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.2958240
File:
PDF, 2.27 MB
english, 2008