Current and Noise Properties of InAs Nanowire Transistors...

IEEE Transactions on Electron Devices 2014 / 03 Vol. 61; Iss. 3

Current and Noise Properties of InAs Nanowire Transistors With Asymmetric Contacts Induced by Gate Overlap

Delker, Collin J., Zi, Yunlong, Yang, Chen, Janes, David B.
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2296298
Date:
March, 2014
File:
PDF, 756 KB
english, 2014
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