Effect of graded-temperature arsenic prelayer on quality of...

Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy

Yu, H. W., Chang, E. Y., Yamamoto, Y., Tillack, B., Wang, W. C., Kuo, C. I., Wong, Y. Y., Nguyen, H. Q.

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Volume:

Year:

2011

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.3656737

File:

PDF, 1.19 MB

english, 2011

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