[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Electron transport in Gate-All-Around uniaxial tensile strained-Si nanowire n-MOSFETs
Hashemi, Pouya, Gomez, Leonardo, Canonico, Michael, Hoyt, Judy L.Year:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796835
File:
PDF, 1.65 MB
english, 2008