Effective Schottky Barrier Height Reduction Using Sulfur or...

IEEE Electron Device Letters 2007 / 12 Vol. 28; Iss. 12

Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance Contacts

Wong, Hoong-Shing, Chan, Lap, Samudra, Ganesh, Yeo, Yee-Chia
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2007.910003
Date:
December, 2007
File:
PDF, 216 KB
english, 2007
Conversion to is in progress
Conversion to is failed