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Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)
Ramachandran, V., Smith, A. R., Feenstra, R. M., Greve, D. W.Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581810
File:
PDF, 981 KB
english, 1999