Temperature dependence of molecular beam epitaxy of GaN on...

Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)

Ramachandran, V., Smith, A. R., Feenstra, R. M., Greve, D. W.
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Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581810
File:
PDF, 981 KB
english, 1999
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