[IEEE 2014 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2014.6.9-2014.6.12)] 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers - Demonstration of Ge pMOSFETs with 6 Å EOT using TaN/ZrO2/Zr-cap/n-Ge(100) gate stack fabricated by novel vacuum annealing and in-situ metal capping method
Shin, Yunsang, Chung, Wonil, Seo, Yujin, Lee, Choong-Ho, Sohn, Dong Kyun, Cho, Byung JinYear:
2014
Language:
english
DOI:
10.1109/vlsit.2014.6894377
File:
PDF, 1.65 MB
english, 2014