[IEEE 2014 IEEE Symposium on VLSI Technology - Honolulu,...

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[IEEE 2014 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2014.6.9-2014.6.12)] 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers - Record Ion (0.50 mA/µm at VDD = 0.5 V and Ioff = 100 nA/µm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs

Lee, S., Chobpattana, V., Huang, C.-Y., Thibeault, B. J., Mitchell, W., Stemmer, S., Gossard, A. C., Rodwell, M. J. W.
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Year:
2014
Language:
english
DOI:
10.1109/vlsit.2014.6894363
File:
PDF, 429 KB
english, 2014
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