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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Large-signal full-band Monte Carlo device simulation of millimeter-wave power GaN HEMTs with the inclusion of parasitic and reliability issues
Guerra, Diego, Ferry, David K., Goodnick, Sthepen M., Saraniti, Marco, Marino, Fabio A.Year:
2011
Language:
english
DOI:
10.1109/sispad.2011.6035056
File:
PDF, 3.08 MB
english, 2011