Behavior of ion-implanted As atoms in Si during molybdenum...

Journal of Applied Physics 1986 Vol. 59; Iss. 9

Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

Ohdomari, Iwao, Chikyow, Toyohiro, Kawarada, Hiroshi, Konuma, Kazuo, Kakumu, Masakazu, Hashimoto, Kazuhiko, Kimura, Itsuro, Yoneda, Kenji
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Volume:
59
Year:
1986
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.336930
File:
PDF, 532 KB
english, 1986
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