Mechanisms of growth and defect properties of epitaxial SiC

Applied Physics Reviews 2014 / 09 Vol. 1; Iss. 3

Mechanisms of growth and defect properties of epitaxial SiC

La Via, F., Camarda, M., La Magna, A.
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Volume:
1
Language:
english
Journal:
Applied Physics Reviews
DOI:
10.1063/1.4890974
Date:
September, 2014
File:
PDF, 9.61 MB
english, 2014
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