[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-к/metal-gate: Effects of hydrogen thermal annealing and nanowire shape
Hashemi, Pouya, Teherani, James T., Hoyt, Judy L.Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703477
File:
PDF, 1.27 MB
english, 2010