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Epitaxy of Al films on GaN studied by reflection...

Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy

Liu, Q. Z., Shen, L., Smith, K. V., Tu, C. W., Yu, E. T., Lau, S. S., Perkins, N. R., Kuech, T. F.
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Volume:
70
Year:
1997
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.118458
File:
PDF, 391 KB
english, 1997
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