Contactless electroreflectance of GaInNAsSb∕GaAs single...

Journal of Applied Physics 2007 Vol. 101; Iss. 1

Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%

Kudrawiec, R., Yuen, H. B., Motyka, M., Gladysiewicz, M., Misiewicz, J., Bank, S. R., Bae, H. P., Wistey, M. A., Harris, James S.
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Volume:
101
Year:
2007
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2382721
File:
PDF, 879 KB
english, 2007
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