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[IEEE 2013 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA (2013.4.14-2013.4.18)] 2013 IEEE International Reliability Physics Symposium (IRPS) - New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs
Randriamihaja, Y. M., Federspiel, X., Huard, V., Bravaix, A., Palestri, P.Year:
2013
Language:
english
DOI:
10.1109/irps.2013.6532116
File:
PDF, 799 KB
english, 2013