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Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors
Higashiwaki, Masataka, Onojima, Norio, Matsui, Toshiaki, Mimura, TakashiVolume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2218759
File:
PDF, 438 KB
english, 2006