Direct measurement and characterization of n[sup +] superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy
Rosenthal, P. A., Taur, Y., Yu, E. T.Volume:
81
Year:
2002
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1522819
File:
PDF, 560 KB
english, 2002