Defect formation in silicon at a mask edge during...

Defect formation in silicon at a mask edge during crystallization of an amorphous implantation layer

Cerva, H., Küsters, K.-H.
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Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343832
File:
PDF, 1.03 MB
english, 1989
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