[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation
Wang, Ronghua, Li, G., Guo, J., Song, B., Verma, J., Hu, Z., Yue, Y., Nomoto, K., Ganguly, S., Rouvimov, S., Gao, X., Laboutin, O., Cao, Y., Johnson, W., Fay, P., Jena, D., Xing, Huili GraceYear:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724712
File:
PDF, 4.41 MB
english, 2013