P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 -...

IEEE Electron Device Letters 2008 / 05 Vol. 29; Iss. 5

P-Channel Tri-Gate FinFETs Featuring $\hbox{Ni}_{1 - y}\hbox{Pt}_{y} \hbox{SiGe}$ Source/Drain Contacts for Enhanced Drive Current Performance

Lee, Rinus Tek-Po, Tan, Kian-Ming, Lim, Andy Eu-Jin, Liow, Tsung-Yang, Samudra, Ganesh S., Chi, Dong-Zhi, Yeo, Yee-Chia
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.920755
Date:
May, 2008
File:
PDF, 624 KB
english, 2008
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