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Low-temperature photoluminescence properties of high-quality GaAs layers grown by molecular-beam epitaxy
Rao, E. V. K., Alexandre, F., Masson, J. M., Allovon, M., Goldstein, L.Volume:
57
Year:
1985
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.334782
File:
PDF, 796 KB
english, 1985