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1/f noise in a quarter-micron GaAs Hall device made by focused ion-beam implantation
Tacano, Munecazu, Kanayama, Toshihiko, Hiroshima, Hiroshi, Komuro, Masanori, Sugiyama, YoshinobuVolume:
62
Year:
1987
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.339108
File:
PDF, 514 KB
english, 1987