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Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors
Chen, M. C., Ku, S. H., Chan, C. T., Wang, TahuiVolume:
96
Year:
2004
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1776640
File:
PDF, 354 KB
english, 2004