Interface States and Trapping Effects in Al...

Japanese Journal of Applied Physics 2009 / 9 Vol. 48; Iss. 9

Interface States and Trapping Effects in Al 2 O 3 - and ZrO 2 /InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures

Ťapajna, Milan, Kuzmík, Jan, Čičo, Karol, Pogany, Dionyz, Pozzovivo, Gianmauro, Strasser, Gottfried, Abermann, Stephan, Bertagnolli, Emmerich, Carlin, Jean-François, Grandjean, Nicolas, Fröhlich, Karo
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.48.090201
Date:
September, 2009
File:
PDF, 219 KB
english, 2009
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