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A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor transistors with shallow trench isolation
Wang, Sihao, Pei, Yunpeng, Huang, Ru, Wang, Wenhua, Liu, Wen, Xue, Shoubin, An, Xia, Tian, Jingquan, Wang, YangyuanVolume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3277017
File:
PDF, 442 KB
english, 2010