Etch rates and surface chemistry of GaAs and AlGaAs...

Journal of Applied Physics 1989 Vol. 66; Iss. 10

Etch rates and surface chemistry of GaAs and AlGaAs reactively ion etched in C2H6/H2

Pearton, S. J., Hobson, W. S., Jones, K. S.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343773
File:
PDF, 1.17 MB
english, 1989
Conversion to is in progress
Conversion to is failed