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Growth of InGaAsP based asymmetric quantum well infrared photodetector using metalorganic vapor phase epitaxy
Li, H., Mei, T., Lantz, K. P., Karunasiri, G.Volume:
96
Year:
2004
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1810203
File:
PDF, 336 KB
english, 2004