High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors
Powell, Stephen K., Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, Flynn B.Volume:
97
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1849424
File:
PDF, 317 KB
english, 2005