High-temperature modeling and characterization of 6H...

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

Powell, Stephen K., Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, Flynn B.
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Volume:
97
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1849424
File:
PDF, 317 KB
english, 2005
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