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Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector
Huang, Hui, Ren, Xiaomin, Lv, Jihe, Wang, Qi, Song, Hailan, Cai, Shiwei, Huang, Yongqing, Qu, BoVolume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3035843
File:
PDF, 1.20 MB
english, 2008