Response to “Comment on ‘Influence of the doping element on...

Journal of Applied Physics 1999 Vol. 85; Iss. 11

Response to “Comment on ‘Influence of the doping element on the electron mobility in n-silicon’ ” [J. Appl. Phys. 85, 7984 (1999)]

Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.
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Volume:
85
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.370621
File:
PDF, 276 KB
english, 1999
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