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Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers
Fang, Z.-Q., Claflin, B., Look, D. C., Green, D. S., Vetury, R.Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3488610
File:
PDF, 1.19 MB
english, 2010