IR studies of the impact of Ge doping on the successive...

Journal of Applied Physics 2011 Vol. 109; Iss. 3

IR studies of the impact of Ge doping on the successive conversion of VO[sub n] defects in Czochralski-Si containing carbon

Londos, C. A., Andrianakis, A., Sgourou, E. N., Emtsev, V. V., Ohyama, H.
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Volume:
109
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3544040
File:
PDF, 516 KB
english, 2011
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