Band structure and electronic characteristics of cubic La2O3 gate dielectrics epitaxially grown on InP substrates
Zhang, Xinqiang, Tu, Hailing, Zhao, Hongbin, Yang, Mengmeng, Wang, Xiaona, Xiong, Yuhua, Yang, Zhimin, Du, Jun, Wang, Wenwu, Chen, DapengVolume:
99
Year:
2011
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3643470
File:
PDF, 1021 KB
english, 2011